Growth of highly oriented ZnO nanorods by chemical vapor deposition

Sai Chang Liu; Jih-Jen Wu

Growth of highly oriented ZnO nanorods by chemical vapor deposition

Sai Chang Liu, Jih-Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C₅H₇O₂)₂). The substrate was heated to 500°C and the vaporization temperature of Zn(C₅H₇O₂)₂ was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E₁(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

Original language	English
Pages (from-to)	49-57
Number of pages	9
Journal	Materials Research Society Symposium - Proceedings
Volume	703
Publication status	Published - 2002 Jan 1
Event	Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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title = "Growth of highly oriented ZnO nanorods by chemical vapor deposition",

abstract = "Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.",

author = "Liu, {Sai Chang} and Jih-Jen Wu",

year = "2002",

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language = "English",

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pages = "49--57",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Nanophase and Nanocomposite Materials IV ; Conference date: 26-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - Growth of highly oriented ZnO nanorods by chemical vapor deposition

AU - Liu, Sai Chang

AU - Wu, Jih-Jen

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

AB - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

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M3 - Conference article

AN - SCOPUS:0036352353

VL - 703

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EP - 57

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

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T2 - Nanophase and Nanocomposite Materials IV

Y2 - 26 November 2001 through 29 November 2001

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