Abstract
Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.
| Original language | English |
|---|---|
| Pages (from-to) | 49-57 |
| Number of pages | 9 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 703 |
| Publication status | Published - 2002 Jan 1 |
| Event | Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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Growth of highly oriented ZnO nanorods by chemical vapor deposition. / Liu, Sai Chang; Wu, Jih-Jen.
In: Materials Research Society Symposium - Proceedings, Vol. 703, 01.01.2002, p. 49-57.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Growth of highly oriented ZnO nanorods by chemical vapor deposition
AU - Liu, Sai Chang
AU - Wu, Jih-Jen
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.
AB - Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.
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UR - http://www.scopus.com/inward/citedby.url?scp=0036352353&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0036352353
VL - 703
SP - 49
EP - 57
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -