Growth of highly oriented ZnO nanorods by chemical vapor deposition

Sai Chang Liu, Jih-Jen Wu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

Original languageEnglish
Pages (from-to)49-57
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume703
Publication statusPublished - 2002 Jan 1
EventNanophase and Nanocomposite Materials IV - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

Fingerprint

Nanorods
nanorods
Chemical vapor deposition
vapor deposition
Photoluminescence
photoluminescence
Substrates
Oxygen vacancies
Fused silica
Vaporization
Raman scattering
Zinc
low concentrations
zinc
Raman spectra
silicon dioxide
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H7O2)2). The substrate was heated to 500°C and the vaporization temperature of Zn(C5H7O2)2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction. Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of E1(LO) mode of the ZnO crystal in Raman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.",
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Growth of highly oriented ZnO nanorods by chemical vapor deposition. / Liu, Sai Chang; Wu, Jih-Jen.

In: Materials Research Society Symposium - Proceedings, Vol. 703, 01.01.2002, p. 49-57.

Research output: Contribution to journalConference article

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AU - Wu, Jih-Jen

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