Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating system

Chiao Yang Cheng, Franklin Chau-Nan Hong

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

A hollow cathode arc (HCA) ion plating system was developed to deposit hydrogen-free diamond-like carbon (DLC) films. Unlike the conventional cold cathodic arc, a high-temperature hollow cathodic arc was employed to generate a high flux of carbon ions and carbon ion clusters producing no micro-particles for the depositions of hydrogen-free DLC films. The plasma density characterized by a Langmuir probe was around 1011 cm- 3 near the anode. The films were characterized by Raman, α-step, SEM, nano-indentation and TEM. The deposition rate was up to 0.6 μm/h. The DLC film with hardness around 19 G Pa was obtained at a substrate bias of - 250 V. The hardness of the DLC film containing no hydrogen was relatively low, and believed to be due to the high substrate temperature (∼ 400 °C) and the high flux of Ar ion bombardments.

Original languageEnglish
Pages (from-to)206-211
Number of pages6
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

Fingerprint

Diamond like carbon films
ion plating
hollow cathodes
Plating
Hydrogen
Cathodes
arcs
diamonds
Ions
carbon
hydrogen
Carbon
Hardness
Fluxes
Langmuir probes
Plasma density
Substrates
Nanoindentation
hardness
Ion bombardment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Cheng, Chiao Yang ; Hong, Franklin Chau-Nan. / Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating system. In: Thin Solid Films. 2006 ; Vol. 498, No. 1-2. pp. 206-211.
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Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating system. / Cheng, Chiao Yang; Hong, Franklin Chau-Nan.

In: Thin Solid Films, Vol. 498, No. 1-2, 01.03.2006, p. 206-211.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Hong, Franklin Chau-Nan

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N2 - A hollow cathode arc (HCA) ion plating system was developed to deposit hydrogen-free diamond-like carbon (DLC) films. Unlike the conventional cold cathodic arc, a high-temperature hollow cathodic arc was employed to generate a high flux of carbon ions and carbon ion clusters producing no micro-particles for the depositions of hydrogen-free DLC films. The plasma density characterized by a Langmuir probe was around 1011 cm- 3 near the anode. The films were characterized by Raman, α-step, SEM, nano-indentation and TEM. The deposition rate was up to 0.6 μm/h. The DLC film with hardness around 19 G Pa was obtained at a substrate bias of - 250 V. The hardness of the DLC film containing no hydrogen was relatively low, and believed to be due to the high substrate temperature (∼ 400 °C) and the high flux of Ar ion bombardments.

AB - A hollow cathode arc (HCA) ion plating system was developed to deposit hydrogen-free diamond-like carbon (DLC) films. Unlike the conventional cold cathodic arc, a high-temperature hollow cathodic arc was employed to generate a high flux of carbon ions and carbon ion clusters producing no micro-particles for the depositions of hydrogen-free DLC films. The plasma density characterized by a Langmuir probe was around 1011 cm- 3 near the anode. The films were characterized by Raman, α-step, SEM, nano-indentation and TEM. The deposition rate was up to 0.6 μm/h. The DLC film with hardness around 19 G Pa was obtained at a substrate bias of - 250 V. The hardness of the DLC film containing no hydrogen was relatively low, and believed to be due to the high substrate temperature (∼ 400 °C) and the high flux of Ar ion bombardments.

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