Growth of InN nanorods on glass substrates by molecular beam heteroepitaxy

Kai Hsuan Lee, Sheng Po Chang, Kuang Wei Liu, Ping Chuan Chang, Shoou Jinn Chang, Tse Pu Chen, Hung Wei Shiu, Lo Yueh Chang, Chia Hao Chen

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5 Citations (Scopus)


Vertically aligned InN nanorods with uniform diameter and length were selectively grown on AlN/glass templates by plasma-assisted molecular beam epitaxy. The high-crystal-quality InN nanorods grow preferentially in the [0002] direction. On a macroscopic scale, the nanorods are found to be entirely relaxed, but possess non-negligible microscopic strain. Judging from the Raman and photoluminescence (PL) spectra, it can be inferred that the strain and/or surface electron accumulation effects may be the likely factors causing the PL shift, rather than the quantum size effect. The calculated conduction band offsets of the InN/AlN nanorod heterojunction along and perpendicular to the c-axis were 4.12 ± 0.1 and 4.11 ± 0.1 eV, respectively. These large offsets provide an alternative way of obtaining rectifying behavior in n-n InN/AlN heterojunctions with nanorod architectures.

Original languageEnglish
Pages (from-to)873-880
Number of pages8
JournalScience of Advanced Materials
Issue number7
Publication statusPublished - 2013 Aug 7

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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  • Cite this

    Lee, K. H., Chang, S. P., Liu, K. W., Chang, P. C., Chang, S. J., Chen, T. P., Shiu, H. W., Chang, L. Y., & Chen, C. H. (2013). Growth of InN nanorods on glass substrates by molecular beam heteroepitaxy. Science of Advanced Materials, 5(7), 873-880.