Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, Y. Z. Chen, K. J. Chen, H. Hung, S. M. Wang, Y. L. Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

Original languageEnglish
Pages (from-to)113-118
Number of pages6
JournalJournal of Crystal Growth
Volume347
Issue number1
DOIs
Publication statusPublished - 2012 May 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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