Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

K. W. Liu; S. J. Young; S. J. Chang; T. H. Hsueh; Y. Z. Chen; K. J. Chen; H. Hung; S. M. Wang; Y. L. Wu

doi:10.1016/j.jcrysgro.2012.03.021

Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, Y. Z. Chen, K. J. Chen, H. Hung, S. M. Wang, Y. L. Wu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

Original language	English
Pages (from-to)	113-118
Number of pages	6
Journal	Journal of Crystal Growth
Volume	347
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.03.021
Publication status	Published - 2012 May 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2012.03.021

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@article{16db9c46f1384154a520fd4c898fdbbe,

title = "Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses",

abstract = "This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.",

author = "Liu, {K. W.} and Young, {S. J.} and Chang, {S. J.} and Hsueh, {T. H.} and Chen, {Y. Z.} and Chen, {K. J.} and H. Hung and Wang, {S. M.} and Wu, {Y. L.}",

note = "Funding Information: This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan ( D97-2700 ), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education. Funding Information: This work was supported by National Science Council of Taiwan under Contract numbers NSC 100-2221-E-150-057 , NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3 . National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged. ",

year = "2012",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2012.03.021",

language = "English",

volume = "347",

pages = "113--118",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

AU - Liu, K. W.

AU - Young, S. J.

AU - Chang, S. J.

AU - Hsueh, T. H.

AU - Chen, Y. Z.

AU - Chen, K. J.

AU - Hung, H.

AU - Wang, S. M.

AU - Wu, Y. L.

N1 - Funding Information: This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan ( D97-2700 ), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education. Funding Information: This work was supported by National Science Council of Taiwan under Contract numbers NSC 100-2221-E-150-057 , NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3 . National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

AB - This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

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DO - 10.1016/j.jcrysgro.2012.03.021

M3 - Article

AN - SCOPUS:84859199130

SN - 0022-0248

VL - 347

SP - 113

EP - 118

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

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