Growth of microcrystalline and nanocrystalline diamond films by microwave plasmas in a gas mixture of 1% methane/5% hydrogen/94% argon

Y. K. Liu, Y. Tzeng, C. Liu, P. Tso, I. N. Lin

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43 Citations (Scopus)

Abstract

Well-faceted microcrystalline diamond (MCD) films were deposited along with nanocrystalline diamond (NCD) films on the same substrate by a microwave plasma in the gas mixture of 1% CH44 + 5% H2 + 94% Ar. This was achieved by forcing a microwave plasma ball generated at 170 torr gas pressure to touch a silicon substrate that was pre-seeded by nanocrystalline diamond powder resulting in a high concentration of atomic hydrogen on the surface of growing diamond. Previously reported compositional mapping of the argon-methane hydrogen system for MCD and NCD growth was not valid in this process parameter space. The non-uniform concentrations of atomic hydrogen and carbon containing radicals such as Ca as well as varied local substrate temperature resulted in the simultaneous deposition of well-faceted MCD films in some areas with nanograined NCD films in others. Dilution of methane/hydrogen microwave plasmas by as much as 94% of argon alone could not suppress the growth of MCD.

Original languageEnglish
Pages (from-to)1859-1864
Number of pages6
JournalDiamond and Related Materials
Volume13
Issue number10
DOIs
Publication statusPublished - 2004 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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