Growth of MnGe nanostructures for spintronics applications

K. L. Wang, Faxian Xiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Mainstream CMOS technology in today's electronics continues to scale down in the feature size. However, power dissipation per unit area and variability are among two major issues and challenges for the continuing scaling. Spintronics, as an emerging technology that exploits the intrinsic spin of the carriers, could potentially offer power savings, low variability and improved scalability. Using nanoscale materials makes possible heterogeneous integration of dissimilar materials by accommodation of strain and minimizing defects. In this paper, we present work on MnxGe1-x nanostructures. We discuss our nanoscale deposition and nano-epi approach in preparing single-crystalline dilute magnetic Mn0.05Ge0.95 QDs. By the use of MOS capacitor with the Mn0.05Ge0.95 QDs as the channel material and by controlling the electrical field at the gate, we demonstrate the ferromagnetism of the QDs by modulating the hole concentration in the channel. A theoretical understanding of high-Curie temperature nature of Mn0.05Ge0.95 is also provided via DOS simulations.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages89-99
Number of pages11
Edition6
DOIs
Publication statusPublished - 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10-10-1010-10-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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