Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions

W. W. Wu, Kuo-Chang Lu, C. W. Wang, H. Y. Hsieh, S. Y. Chen, Y. C. Chou, S. Y. Yu, L. J. Chen, K. N. Tu

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale. Here, we report efficient and unique methods, point and line contact reactions on Si nanowires, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale. By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NiSi and Si with very sharp interfaces were produced in a Si nanowire. Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NiSi grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire. The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni atoms within a Si nanowire. The growth of NiSi stops as the amount of Ni in the Ni nanodots is consumed. Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si, we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices. Unlike the point contact reaction, silicide growth starts at the contact area in the line contact reaction; the different silicide formation modes resulting from point and line contact reactions are compared and analyzed. A mechanism on the basis of flux divergence is proposed for controlling the growth of the nano-multiheterostructures.

Original languageEnglish
Pages (from-to)3984-3989
Number of pages6
JournalNano Letters
Volume10
Issue number10
DOIs
Publication statusPublished - 2010 Oct 13

Fingerprint

Nanowires
Point contacts
Metals
nanowires
Semiconductor materials
metals
sugar cane
Sugar cane
Networks (circuits)
Nanospheres
Ultrahigh vacuum
Nanotechnology
Lithography
nanotechnology
Heterojunctions
Chemical reactions
Dissolution
ultrahigh vacuum
Nucleation
chemical reactions

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Wu, W. W., Lu, K-C., Wang, C. W., Hsieh, H. Y., Chen, S. Y., Chou, Y. C., ... Tu, K. N. (2010). Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Letters, 10(10), 3984-3989. https://doi.org/10.1021/nl101842w
Wu, W. W. ; Lu, Kuo-Chang ; Wang, C. W. ; Hsieh, H. Y. ; Chen, S. Y. ; Chou, Y. C. ; Yu, S. Y. ; Chen, L. J. ; Tu, K. N. / Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. In: Nano Letters. 2010 ; Vol. 10, No. 10. pp. 3984-3989.
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Wu, WW, Lu, K-C, Wang, CW, Hsieh, HY, Chen, SY, Chou, YC, Yu, SY, Chen, LJ & Tu, KN 2010, 'Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions', Nano Letters, vol. 10, no. 10, pp. 3984-3989. https://doi.org/10.1021/nl101842w

Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. / Wu, W. W.; Lu, Kuo-Chang; Wang, C. W.; Hsieh, H. Y.; Chen, S. Y.; Chou, Y. C.; Yu, S. Y.; Chen, L. J.; Tu, K. N.

In: Nano Letters, Vol. 10, No. 10, 13.10.2010, p. 3984-3989.

Research output: Contribution to journalArticle

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AU - Wu, W. W.

AU - Lu, Kuo-Chang

AU - Wang, C. W.

AU - Hsieh, H. Y.

AU - Chen, S. Y.

AU - Chou, Y. C.

AU - Yu, S. Y.

AU - Chen, L. J.

AU - Tu, K. N.

PY - 2010/10/13

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N2 - Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale. Here, we report efficient and unique methods, point and line contact reactions on Si nanowires, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale. By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NiSi and Si with very sharp interfaces were produced in a Si nanowire. Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NiSi grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire. The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni atoms within a Si nanowire. The growth of NiSi stops as the amount of Ni in the Ni nanodots is consumed. Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si, we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices. Unlike the point contact reaction, silicide growth starts at the contact area in the line contact reaction; the different silicide formation modes resulting from point and line contact reactions are compared and analyzed. A mechanism on the basis of flux divergence is proposed for controlling the growth of the nano-multiheterostructures.

AB - Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale. Here, we report efficient and unique methods, point and line contact reactions on Si nanowires, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale. By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NiSi and Si with very sharp interfaces were produced in a Si nanowire. Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NiSi grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire. The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni atoms within a Si nanowire. The growth of NiSi stops as the amount of Ni in the Ni nanodots is consumed. Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si, we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices. Unlike the point contact reaction, silicide growth starts at the contact area in the line contact reaction; the different silicide formation modes resulting from point and line contact reactions are compared and analyzed. A mechanism on the basis of flux divergence is proposed for controlling the growth of the nano-multiheterostructures.

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