Growth of nanocrystalline diamond films in CCl4/H2 ambient

Jih Jen Wu; Chen Hao Ku; Te Chi Wong; Chien Ting Wu; Kuei Hsien Chen; Li Chyong Chen

doi:10.1016/j.tsf.2004.06.152

Growth of nanocrystalline diamond films in CCl₄/H₂ ambient

Jih Jen Wu, Chen Hao Ku, Te Chi Wong, Chien Ting Wu, Kuei Hsien Chen, Li Chyong Chen

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated the growth characteristics of the nanocrystalline diamond films using CCl₄/H₂ as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl₄ and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl₄/H₂ at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

Original language	English
Pages (from-to)	24-30
Number of pages	7
Journal	Thin Solid Films
Volume	473
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.06.152
Publication status	Published - 2005 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.06.152

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title = "Growth of nanocrystalline diamond films in CCl4/H2 ambient",

abstract = "We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.",

author = "Wu, {Jih Jen} and Ku, {Chen Hao} and Wong, {Te Chi} and Wu, {Chien Ting} and Chen, {Kuei Hsien} and Chen, {Li Chyong}",

note = "Funding Information: All authors would like to gratefully acknowledge the financial support from the National Science Council and Academia Sinica in Taiwan.",

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AU - Wu, Jih Jen

AU - Ku, Chen Hao

AU - Wong, Te Chi

AU - Wu, Chien Ting

AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

N1 - Funding Information: All authors would like to gratefully acknowledge the financial support from the National Science Council and Academia Sinica in Taiwan.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

AB - We investigated the growth characteristics of the nanocrystalline diamond films using CCl4/H2 as gas sources in a hot-filament chemical vapor deposition (CVD) reactor. Successful growth of nanocrystalline diamond at typical growth condition of 1.5-2.5% CCl4 and 550-730 °C substrate temperature has been demonstrated. Glancing angle X-ray diffraction (XRD) clearly indicated the formation of diamond in the films. Typical root-mean-square surface roughness of 10-15 nm and an optimal root-mean-square surface roughness of 6 nm have been achieved. Transmission electron microscopy (TEM) analyses indicated that nanocrystalline diamond film with an average grain size in the range of 10-20 nm was deposited from 2.5% CCl4/H2 at 610°C. Effects of different source gas composition and substrate temperature on the grain nucleation and grain growth processes, whereby the grain size of the nanocrystalline film could be controlled, were discussed.

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Growth of nanocrystalline diamond films in CCl₄/H₂ ambient

Abstract

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