Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Chun Yu Lin, Yean Kuen Fang, Shih Fang Chen, Ping Chang Lin, Chun Sheng Lin, Tse Heng Chou, Jenn Shyong Hwang, Kuang I. Lin

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume127
Issue number2-3
DOIs
Publication statusPublished - 2006 Feb 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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