Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Chun Yu Lin, Yean Kuen Fang, Shih Fang Chen, Ping Chang Lin, Chun Sheng Lin, Tse Heng Chou, Jenn Shyong Hwang, Kuang-I Lin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume127
Issue number2-3
DOIs
Publication statusPublished - 2006 Feb 25

Fingerprint

Nanocrystalline silicon
Hall mobility
Thin films
Film thickness
silicon
thin films
silicon films
film thickness
Raman scattering
Scanning electron microscopy
absorptivity
atomic force microscopy
Raman spectra
scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lin, Chun Yu ; Fang, Yean Kuen ; Chen, Shih Fang ; Lin, Ping Chang ; Lin, Chun Sheng ; Chou, Tse Heng ; Hwang, Jenn Shyong ; Lin, Kuang-I. / Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2006 ; Vol. 127, No. 2-3. pp. 251-254.
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abstract = "High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.",
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Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications. / Lin, Chun Yu; Fang, Yean Kuen; Chen, Shih Fang; Lin, Ping Chang; Lin, Chun Sheng; Chou, Tse Heng; Hwang, Jenn Shyong; Lin, Kuang-I.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 127, No. 2-3, 25.02.2006, p. 251-254.

Research output: Contribution to journalArticle

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T1 - Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

AU - Lin, Chun Yu

AU - Fang, Yean Kuen

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AB - High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

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