Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Chun Yu Lin; Yean Kuen Fang; Shih Fang Chen; Ping Chang Lin; Chun Sheng Lin; Tse Heng Chou; Jenn Shyong Hwang; Kuang I. Lin

doi:10.1016/j.mseb.2005.10.007

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Chun Yu Lin, Yean Kuen Fang, Shih Fang Chen, Ping Chang Lin, Chun Sheng Lin, Tse Heng Chou, Jenn Shyong Hwang, Kuang I. Lin

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Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

Original language	English
Pages (from-to)	251-254
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	127
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2005.10.007
Publication status	Published - 2006 Feb 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2005.10.007

Cite this

@article{10537cbe6a2f43168db0e59e2ca63392,

title = "Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications",

abstract = "High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.",

author = "Lin, {Chun Yu} and Fang, {Yean Kuen} and Chen, {Shih Fang} and Lin, {Ping Chang} and Lin, {Chun Sheng} and Chou, {Tse Heng} and Hwang, {Jenn Shyong} and Lin, {Kuang I.}",

note = "Funding Information: The work was financially supported by the National Science Council under Contract NSC 93-2215-E-006-005.",

year = "2006",

month = feb,

day = "25",

doi = "10.1016/j.mseb.2005.10.007",

language = "English",

volume = "127",

pages = "251--254",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2-3",

}

TY - JOUR

T1 - Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

AU - Lin, Chun Yu

AU - Fang, Yean Kuen

AU - Chen, Shih Fang

AU - Lin, Ping Chang

AU - Lin, Chun Sheng

AU - Chou, Tse Heng

AU - Hwang, Jenn Shyong

AU - Lin, Kuang I.

N1 - Funding Information: The work was financially supported by the National Science Council under Contract NSC 93-2215-E-006-005.

PY - 2006/2/25

Y1 - 2006/2/25

N2 - High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

AB - High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm.

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U2 - 10.1016/j.mseb.2005.10.007

DO - 10.1016/j.mseb.2005.10.007

M3 - Article

AN - SCOPUS:31344464730

SN - 0921-5107

VL - 127

SP - 251

EP - 254

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3

ER -

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Abstract

All Science Journal Classification (ASJC) codes

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