Growth of nanoscale InGaN self-assembled quantum dots

L. W. Ji; Y. K. Su; S. J. Chang; L. W. Wu; T. H. Fang; J. F. Chen; T. Y. Tsai; Q. K. Xue; S. C. Chen

doi:10.1016/S0022-0248(02)02130-9

Growth of nanoscale InGaN self-assembled quantum dots

L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, S. C. Chen

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61 Citations (Scopus)

Abstract

It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 10¹⁰cm^-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.

Original language	English
Pages (from-to)	144-148
Number of pages	5
Journal	Journal of Crystal Growth
Volume	249
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)02130-9
Publication status	Published - 2003 Feb

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)02130-9

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@article{26bac77fa2ee4837b75df4cf7e851023,

title = "Growth of nanoscale InGaN self-assembled quantum dots",

abstract = "It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.",

author = "Ji, {L. W.} and Su, {Y. K.} and Chang, {S. J.} and Wu, {L. W.} and Fang, {T. H.} and Chen, {J. F.} and Tsai, {T. Y.} and Xue, {Q. K.} and Chen, {S. C.}",

note = "Funding Information: This work was financially supported by the National Science Council of Taiwan (Project No. NSC 90-2215-E-006-024).",

year = "2003",

month = feb,

doi = "10.1016/S0022-0248(02)02130-9",

language = "English",

volume = "249",

pages = "144--148",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Growth of nanoscale InGaN self-assembled quantum dots

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Wu, L. W.

AU - Fang, T. H.

AU - Chen, J. F.

AU - Tsai, T. Y.

AU - Xue, Q. K.

AU - Chen, S. C.

N1 - Funding Information: This work was financially supported by the National Science Council of Taiwan (Project No. NSC 90-2215-E-006-024).

PY - 2003/2

Y1 - 2003/2

N2 - It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.

AB - It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.

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U2 - 10.1016/S0022-0248(02)02130-9

DO - 10.1016/S0022-0248(02)02130-9

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SN - 0022-0248

VL - 249

SP - 144

EP - 148

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Growth of nanoscale InGaN self-assembled quantum dots

Abstract

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