Growth of nanoscale InGaN self-assembled quantum dots

L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue, S. C. Chen

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 × 1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD.

Original languageEnglish
Pages (from-to)144-148
Number of pages5
JournalJournal of Crystal Growth
Volume249
Issue number1-2
DOIs
Publication statusPublished - 2003 Feb 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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