Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu; S. J. Chang; R. M. Lin; Y. H. Lin; Y. C. Lu; S. P. Chang; Y. Z. Chiou

doi:10.1016/j.jcrysgro.2010.03.027

Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu
, S. J. Chang
, R. M. Lin
, Y. H. Lin
, Y. C. Lu
, S. P. Chang
, Y. Z. Chiou

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al_0.89In_0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

Original language	English
Pages (from-to)	1920-1924
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	12-13
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.03.027
Publication status	Published - 2010 Jun 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.03.027

Cite this

@article{f0f0646e171044728d570756a1d3278b,

title = "Growth of quaternary AlInGaN with various TMI molar rates",

abstract = "We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.",

author = "Yu, \{S. F.\} and Chang, \{S. J.\} and Lin, \{R. M.\} and Lin, \{Y. H.\} and Lu, \{Y. C.\} and Chang, \{S. P.\} and Chiou, \{Y. Z.\}",

year = "2010",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2010.03.027",

language = "English",

volume = "312",

pages = "1920--1924",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "12-13",

}

TY - JOUR

T1 - Growth of quaternary AlInGaN with various TMI molar rates

AU - Yu, S. F.

AU - Chang, S. J.

AU - Lin, R. M.

AU - Lin, Y. H.

AU - Lu, Y. C.

AU - Chang, S. P.

AU - Chiou, Y. Z.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

AB - We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

UR - https://www.scopus.com/pages/publications/77955228707

UR - https://www.scopus.com/pages/publications/77955228707#tab=citedBy

U2 - 10.1016/j.jcrysgro.2010.03.027

DO - 10.1016/j.jcrysgro.2010.03.027

M3 - Article

AN - SCOPUS:77955228707

SN - 0022-0248

VL - 312

SP - 1920

EP - 1924

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 12-13

ER -

Growth of quaternary AlInGaN with various TMI molar rates

Abstract

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