Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)

J. L. Liu, S. J. Cai, G. L. Jin, S. G. Thomas, K. L. Wang

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The vapor-liquid-solid growth of Si whiskers from disilane has been studied in a gas source MBE system. The wire-like Si crystals are grown on Si(1 1 1) substrates in a temperature range of 600-800°C, a disilane pressure between 1 × 10-4 and 1 × 10-7 Torr, and using Au as a growth-promoting agent. The morphology of the Si whiskers is investigated. It is found that the growth rate of the vertical wires is independent of the wire diameter (i.e. whiskers with different diameters have the same growth rate). The growth rate of the wires in the vertical direction increases with increasing substrate temperature and disilane pressure, and is about 8-10 times larger than the growth rate of the planar film on the substrate and the width of the whiskers.

Original languageEnglish
Pages (from-to)106-111
Number of pages6
JournalJournal of Crystal Growth
Volume200
Issue number1-2
DOIs
Publication statusPublished - 1999 Apr 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)'. Together they form a unique fingerprint.

Cite this