Growth of SiC nanoparticles in C/Si multilayers using annealing

Chen-Kuei Chung, B. H. Wu, T. R. Shih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.

Original languageEnglish
Title of host publicationProceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
PublisherIEEE Computer Society
Pages915-918
Number of pages4
ISBN (Print)1424401402, 9781424401406
DOIs
Publication statusPublished - 2006 Jan 1
Event1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS - Zhuhai, China
Duration: 2006 Jan 182006 Jan 21

Publication series

NameProceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Other

Other1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
CountryChina
CityZhuhai
Period06-01-1806-01-21

Fingerprint

Vacuum
Nanoparticles
Multilayers
Hot Temperature
Annealing
Temperature
Growth
Interfacial energy
X-Rays
Electrons
Ions
Pressure
Incidence
Diffractometers
Physical vapor deposition
Ultrahigh vacuum
Ion beams
Sputtering
Chemical vapor deposition
Electron microscopes

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Materials Science (miscellaneous)

Cite this

Chung, C-K., Wu, B. H., & Shih, T. R. (2006). Growth of SiC nanoparticles in C/Si multilayers using annealing. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS (pp. 915-918). [4135097] (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). IEEE Computer Society. https://doi.org/10.1109/NEMS.2006.334564
Chung, Chen-Kuei ; Wu, B. H. ; Shih, T. R. / Growth of SiC nanoparticles in C/Si multilayers using annealing. Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. IEEE Computer Society, 2006. pp. 915-918 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).
@inproceedings{62ae48cdede540e6b17b1afd9a29447e,
title = "Growth of SiC nanoparticles in C/Si multilayers using annealing",
abstract = "Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.",
author = "Chen-Kuei Chung and Wu, {B. H.} and Shih, {T. R.}",
year = "2006",
month = "1",
day = "1",
doi = "10.1109/NEMS.2006.334564",
language = "English",
isbn = "1424401402",
series = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",
publisher = "IEEE Computer Society",
pages = "915--918",
booktitle = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",
address = "United States",

}

Chung, C-K, Wu, BH & Shih, TR 2006, Growth of SiC nanoparticles in C/Si multilayers using annealing. in Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS., 4135097, Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, IEEE Computer Society, pp. 915-918, 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, Zhuhai, China, 06-01-18. https://doi.org/10.1109/NEMS.2006.334564

Growth of SiC nanoparticles in C/Si multilayers using annealing. / Chung, Chen-Kuei; Wu, B. H.; Shih, T. R.

Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. IEEE Computer Society, 2006. p. 915-918 4135097 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Growth of SiC nanoparticles in C/Si multilayers using annealing

AU - Chung, Chen-Kuei

AU - Wu, B. H.

AU - Shih, T. R.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.

AB - Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.

UR - http://www.scopus.com/inward/record.url?scp=46149094399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46149094399&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2006.334564

DO - 10.1109/NEMS.2006.334564

M3 - Conference contribution

SN - 1424401402

SN - 9781424401406

T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

SP - 915

EP - 918

BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

PB - IEEE Computer Society

ER -

Chung C-K, Wu BH, Shih TR. Growth of SiC nanoparticles in C/Si multilayers using annealing. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. IEEE Computer Society. 2006. p. 915-918. 4135097. (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). https://doi.org/10.1109/NEMS.2006.334564