Abstract
Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS |
| Publisher | IEEE Computer Society |
| Pages | 915-918 |
| Number of pages | 4 |
| ISBN (Print) | 1424401402, 9781424401406 |
| DOIs | |
| Publication status | Published - 2006 Jan 1 |
| Event | 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS - Zhuhai, China Duration: 2006 Jan 18 → 2006 Jan 21 |
Publication series
| Name | Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS |
|---|
Other
| Other | 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS |
|---|---|
| Country | China |
| City | Zhuhai |
| Period | 06-01-18 → 06-01-21 |
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All Science Journal Classification (ASJC) codes
- Biotechnology
- Materials Science (miscellaneous)
Cite this
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Growth of SiC nanoparticles in C/Si multilayers using annealing. / Chung, Chen-Kuei; Wu, B. H.; Shih, T. R.
Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. IEEE Computer Society, 2006. p. 915-918 4135097 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Growth of SiC nanoparticles in C/Si multilayers using annealing
AU - Chung, Chen-Kuei
AU - Wu, B. H.
AU - Shih, T. R.
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.
AB - Conventional nanoparticles were directly synthesized in single film by PVD or CVD process. In this paper, we proposed a novel approach to the growth of SiC nano-particles (np-SiC) by thermal annealing of C/Si multilayers deposited on single crystalline Si (100) substrates using ion beam sputtering system (IBS). The deposition of C/Si multilayers was performed at room temperature under ultra high vacuum at a base pressure of 10-7-10-8Pa and then post high vacuum annealing at 500- 900 °C at 10-4Pa. The np-SiC in C/Si multilayers were examined by scanning electron microscope (SEM) for particle characterization, and grazing incidence X-ray diffractometer (GIXRD) for phase identification. The size distribution and geometrical arrangement of np-SiC strongly depend on the thermal annealing temperature. The higher the annealing temperature, the more the nanoparticle size and density. Owing to the high surface energy, SiC nanoparticles, instead of film, are preferred to form on the surface in order to reduce the surface energy of film during annealing. After vacuum annealing at 900 °C for 1.0 hr, the size and density of np-SiC are about 300-600 nm in diameter and 1.37 × 108cm-2, respectively. The growth of np-SiC is attributed to the thermal annealing induced surface energy variation between Si and C reaction in thin C/Si multilayers.
UR - http://www.scopus.com/inward/record.url?scp=46149094399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46149094399&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2006.334564
DO - 10.1109/NEMS.2006.334564
M3 - Conference contribution
SN - 1424401402
SN - 9781424401406
T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
SP - 915
EP - 918
BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
PB - IEEE Computer Society
ER -