Growth of single-crystalline cobalt silicide nanowires and their field emission property

Chi Ming Lu, Han Fu Hsu, Kuo Chang Lu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ∼ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ∼ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.

Original languageEnglish
Article number308
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Growth of single-crystalline cobalt silicide nanowires and their field emission property'. Together they form a unique fingerprint.

Cite this