Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors

A. Berenov; Z. Lockman; X. Qi; J. L. MacManus-Driscoll; Y. Bugoslavsky; L. F. Cohen; M. H. Jo; N. A. Stelmashenko; V. N. Tsaneva; M. Kambara; N. Hari Babu; D. A. Cardwell; M. G. Blamire

doi:10.1063/1.1424070

Growth of strongly biaxially aligned MgB₂ thin films on sapphire by postannealing of amorphous precursors

A. Berenov, Z. Lockman, X. Qi, J. L. MacManus-Driscoll, Y. Bugoslavsky, L. F. Cohen, M. H. Jo, N. A. Stelmashenko, V. N. Tsaneva, M. Kambara, N. Hari Babu, D. A. Cardwell, M. G. Blamire

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Abstract

MgB₂ thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO₂∼10^-24 atm) at 750 and 950 °C. The films had T_c in the range 29-34 K, J_c (20 K, H=0) in the range 3×10⁴-3×10⁵ A cm^-2, and irreversibility fields H^* at 20 K of 4-6.2 T. An inverse correlation was found between T_c and H^*. The films had grain sizes of ∼0.1-1 μm and a strong biaxial alignment was observed in the 950 °C annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film T_c.

Original language	English
Pages (from-to)	4001-4003
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	24
DOIs	https://doi.org/10.1063/1.1424070
Publication status	Published - 2001 Dec 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1424070

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Berenov, A., Lockman, Z., Qi, X., MacManus-Driscoll, J. L., Bugoslavsky, Y., Cohen, L. F., Jo, M. H., Stelmashenko, N. A., Tsaneva, V. N., Kambara, M., Babu, N. H., Cardwell, D. A., & Blamire, M. G. (2001). Growth of strongly biaxially aligned MgB₂ thin films on sapphire by postannealing of amorphous precursors. Applied Physics Letters, 79(24), 4001-4003. https://doi.org/10.1063/1.1424070

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title = "Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors",

abstract = "MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO2∼10-24 atm) at 750 and 950 °C. The films had Tc in the range 29-34 K, Jc (20 K, H=0) in the range 3×104-3×105 A cm-2, and irreversibility fields H* at 20 K of 4-6.2 T. An inverse correlation was found between Tc and H*. The films had grain sizes of ∼0.1-1 μm and a strong biaxial alignment was observed in the 950 °C annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film Tc.",

author = "A. Berenov and Z. Lockman and X. Qi and MacManus-Driscoll, {J. L.} and Y. Bugoslavsky and Cohen, {L. F.} and Jo, {M. H.} and Stelmashenko, {N. A.} and Tsaneva, {V. N.} and M. Kambara and Babu, {N. Hari} and Cardwell, {D. A.} and Blamire, {M. G.}",

year = "2001",

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doi = "10.1063/1.1424070",

language = "English",

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pages = "4001--4003",

journal = "Applied Physics Letters",

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Berenov, A, Lockman, Z, Qi, X, MacManus-Driscoll, JL, Bugoslavsky, Y, Cohen, LF, Jo, MH, Stelmashenko, NA, Tsaneva, VN, Kambara, M, Babu, NH, Cardwell, DA & Blamire, MG 2001, 'Growth of strongly biaxially aligned MgB₂ thin films on sapphire by postannealing of amorphous precursors', Applied Physics Letters, vol. 79, no. 24, pp. 4001-4003. https://doi.org/10.1063/1.1424070

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T1 - Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors

AU - Berenov, A.

AU - Lockman, Z.

AU - Qi, X.

AU - MacManus-Driscoll, J. L.

AU - Bugoslavsky, Y.

AU - Cohen, L. F.

AU - Jo, M. H.

AU - Stelmashenko, N. A.

AU - Tsaneva, V. N.

AU - Kambara, M.

AU - Babu, N. Hari

AU - Cardwell, D. A.

AU - Blamire, M. G.

PY - 2001/12/10

Y1 - 2001/12/10

N2 - MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO2∼10-24 atm) at 750 and 950 °C. The films had Tc in the range 29-34 K, Jc (20 K, H=0) in the range 3×104-3×105 A cm-2, and irreversibility fields H* at 20 K of 4-6.2 T. An inverse correlation was found between Tc and H*. The films had grain sizes of ∼0.1-1 μm and a strong biaxial alignment was observed in the 950 °C annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film Tc.

AB - MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO2∼10-24 atm) at 750 and 950 °C. The films had Tc in the range 29-34 K, Jc (20 K, H=0) in the range 3×104-3×105 A cm-2, and irreversibility fields H* at 20 K of 4-6.2 T. An inverse correlation was found between Tc and H*. The films had grain sizes of ∼0.1-1 μm and a strong biaxial alignment was observed in the 950 °C annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film Tc.

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Growth of strongly biaxially aligned MgB₂ thin films on sapphire by postannealing of amorphous precursors

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