Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors

A. Berenov, Z. Lockman, X. Qi, J. L. MacManus-Driscoll, Y. Bugoslavsky, L. F. Cohen, M. H. Jo, N. A. Stelmashenko, V. N. Tsaneva, M. Kambara, N. Hari Babu, D. A. Cardwell, M. G. Blamire

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37 Citations (Scopus)

Abstract

MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO2∼10-24 atm) at 750 and 950 °C. The films had Tc in the range 29-34 K, Jc (20 K, H=0) in the range 3×104-3×105 A cm-2, and irreversibility fields H* at 20 K of 4-6.2 T. An inverse correlation was found between Tc and H*. The films had grain sizes of ∼0.1-1 μm and a strong biaxial alignment was observed in the 950 °C annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film Tc.

Original languageEnglish
Pages (from-to)4001-4003
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - 2001 Dec 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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