Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

S. J. Chang, C. H. Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng, S. H. Chih

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.

Original languageEnglish
Pages (from-to)50-57
Number of pages8
JournalSuperlattices and Microstructures
Volume48
Issue number1
DOIs
Publication statusPublished - 2010 Jul

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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