Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

S. J. Chang; C. H. Hsiao; B. W. Lan; S. C. Hung; B. R. Huang; S. J. Young; Y. C. Cheng; S. H. Chih

doi:10.1016/j.spmi.2010.04.014

Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

S. J. Chang, C. H. Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng, S. H. Chih

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13 Citations (Scopus)

Abstract

The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.

Original language	English
Pages (from-to)	50-57
Number of pages	8
Journal	Superlattices and Microstructures
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/j.spmi.2010.04.014
Publication status	Published - 2010 Jul

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2010.04.014

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title = "Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors",

abstract = "The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.",

author = "Chang, {S. J.} and Hsiao, {C. H.} and Lan, {B. W.} and Hung, {S. C.} and Huang, {B. R.} and Young, {S. J.} and Cheng, {Y. C.} and Chih, {S. H.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. This work was also in part supported by Ministry of Economic Affairs (MOEA) and NSC 98-EC-17-A-09020769 . The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.",

year = "2010",

month = jul,

doi = "10.1016/j.spmi.2010.04.014",

language = "English",

volume = "48",

pages = "50--57",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

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TY - JOUR

T1 - Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

AU - Chang, S. J.

AU - Hsiao, C. H.

AU - Lan, B. W.

AU - Hung, S. C.

AU - Huang, B. R.

AU - Young, S. J.

AU - Cheng, Y. C.

AU - Chih, S. H.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. This work was also in part supported by Ministry of Economic Affairs (MOEA) and NSC 98-EC-17-A-09020769 . The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.

PY - 2010/7

Y1 - 2010/7

N2 - The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.

AB - The authors report the growth of high density ternary ZnCdSe nanowires on an oxidized Si(100) substrate using molecular beam epitaxy and the fabrication of a ZnCdSe nanowire photodetector. It was found that the as-grown ZnCdSe nanowires exhibited a mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that average length and width of the ZnCdSe nanowires were ∼1.8 μm and ∼42.7 nm, respectively. Furthermore, it was found that photocurrent to dark current contrast ratio was around 25 for the fabricated photodetector under 5 V applied bias.

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors

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