Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

Xia Xi Zheng; Chun Wang; Jian Hao Huang; Jen Yao Huang; Daisuke Ueda; Krishna Pande; Chang Fu Dee; Ching Ting Lee; Edward Yi Chang

doi:10.1016/j.tsf.2022.139295

Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

Xia Xi Zheng, Chun Wang, Jian Hao Huang, Jen Yao Huang, Daisuke Ueda, Krishna Pande, Chang Fu Dee, Ching Ting Lee, Edward Yi Chang

Department of Photonics

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Abstract

In this paper, we investigate the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates. During the barrier layer growth, the injection rate of the Trimethylindium plays an important role in the amount of Ga incorporation into the InAlGaN layer, while the variation of Trimethylaluminum has less impact. High mobility of 1800 cm²/(V·s) and high carrier electron density with an ultrathin of 3 nm thickness InAlGaN barrier layer simultaneously maintaining high crystallinity and smooth surface of InAlGaN barrier layer is achieved with sputtered AlN/sapphire templates and optimized group-III injection rate.

Original language	English
Article number	139295
Journal	Thin Solid Films
Volume	754
DOIs	https://doi.org/10.1016/j.tsf.2022.139295
Publication status	Published - 2022 Jul 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Zheng, X. X., Wang, C., Huang, J. H., Huang, J. Y., Ueda, D., Pande, K., Dee, C. F., Lee, C. T., & Chang, E. Y. (2022). Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition. Thin Solid Films, 754, Article 139295. https://doi.org/10.1016/j.tsf.2022.139295

@article{962ec185b6d8402d812c69d86beaa75b,

title = "Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition",

abstract = "In this paper, we investigate the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates. During the barrier layer growth, the injection rate of the Trimethylindium plays an important role in the amount of Ga incorporation into the InAlGaN layer, while the variation of Trimethylaluminum has less impact. High mobility of 1800 cm2/(V·s) and high carrier electron density with an ultrathin of 3 nm thickness InAlGaN barrier layer simultaneously maintaining high crystallinity and smooth surface of InAlGaN barrier layer is achieved with sputtered AlN/sapphire templates and optimized group-III injection rate.",

author = "Zheng, {Xia Xi} and Chun Wang and Huang, {Jian Hao} and Huang, {Jen Yao} and Daisuke Ueda and Krishna Pande and Dee, {Chang Fu} and Lee, {Ching Ting} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2022.139295",

language = "English",

volume = "754",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

Zheng, XX, Wang, C, Huang, JH, Huang, JY, Ueda, D, Pande, K, Dee, CF, Lee, CT & Chang, EY 2022, 'Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition', Thin Solid Films, vol. 754, 139295. https://doi.org/10.1016/j.tsf.2022.139295

Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition. / Zheng, Xia Xi; Wang, Chun; Huang, Jian Hao et al.
In: Thin Solid Films, Vol. 754, 139295, 31.07.2022.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

AU - Zheng, Xia Xi

AU - Wang, Chun

AU - Huang, Jian Hao

AU - Huang, Jen Yao

AU - Ueda, Daisuke

AU - Pande, Krishna

AU - Dee, Chang Fu

AU - Lee, Ching Ting

AU - Chang, Edward Yi

PY - 2022/7/31

Y1 - 2022/7/31

N2 - In this paper, we investigate the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates. During the barrier layer growth, the injection rate of the Trimethylindium plays an important role in the amount of Ga incorporation into the InAlGaN layer, while the variation of Trimethylaluminum has less impact. High mobility of 1800 cm2/(V·s) and high carrier electron density with an ultrathin of 3 nm thickness InAlGaN barrier layer simultaneously maintaining high crystallinity and smooth surface of InAlGaN barrier layer is achieved with sputtered AlN/sapphire templates and optimized group-III injection rate.

AB - In this paper, we investigate the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates. During the barrier layer growth, the injection rate of the Trimethylindium plays an important role in the amount of Ga incorporation into the InAlGaN layer, while the variation of Trimethylaluminum has less impact. High mobility of 1800 cm2/(V·s) and high carrier electron density with an ultrathin of 3 nm thickness InAlGaN barrier layer simultaneously maintaining high crystallinity and smooth surface of InAlGaN barrier layer is achieved with sputtered AlN/sapphire templates and optimized group-III injection rate.

UR - http://www.scopus.com/inward/record.url?scp=85130563832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85130563832&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2022.139295

DO - 10.1016/j.tsf.2022.139295

M3 - Article

AN - SCOPUS:85130563832

SN - 0040-6090

VL - 754

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 139295

ER -

Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

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