Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao, Minh Thien Huu Ha, Ching Yi Hsu, Yueh Chin Lin, Sheng Po Chang, Shoou Jinn Chang, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

Original languageEnglish
Article number095502
JournalApplied Physics Express
Volume9
Issue number9
DOIs
Publication statusPublished - 2016 Sep

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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