Abstract
We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).
Original language | English |
---|---|
Pages (from-to) | 84-88 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 107 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2004 Feb 25 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering