Growth of ZnSe films on ZnO-Si templates

X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, W. Su, J. Y. Zhang, Y. K. Su, S. J. Chang, Y. M. Lu, Y. C. Liu, D. Z. Shen

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).

Original languageEnglish
Pages (from-to)84-88
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume107
Issue number1
DOIs
Publication statusPublished - 2004 Feb 25

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Growth of ZnSe films on ZnO-Si templates'. Together they form a unique fingerprint.

Cite this