Growth of ZnSe films on ZnO-Si templates

X. H. Wang; X. W. Fan; C. X. Shan; Z. Z. Zhang; W. Su; J. Y. Zhang; Y. K. Su; S. J. Chang; Y. M. Lu; Y. C. Liu; D. Z. Shen

doi:10.1016/j.mseb.2003.10.015

Growth of ZnSe films on ZnO-Si templates

X. H. Wang
, X. W. Fan
, C. X. Shan
, Z. Z. Zhang
, W. Su
, J. Y. Zhang
, Y. K. Su
, S. J. Chang
, Y. M. Lu
, Y. C. Liu
, D. Z. Shen

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).

Original language	English
Pages (from-to)	84-88
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	107
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2003.10.015
Publication status	Published - 2004 Feb 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2003.10.015

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@article{1e0fa64da1914755968580ee9d842576,

title = "Growth of ZnSe films on ZnO-Si templates",

abstract = "We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).",

author = "Wang, \{X. H.\} and Fan, \{X. W.\} and Shan, \{C. X.\} and Zhang, \{Z. Z.\} and W. Su and Zhang, \{J. Y.\} and Su, \{Y. K.\} and Chang, \{S. J.\} and Lu, \{Y. M.\} and Liu, \{Y. C.\} and Shen, \{D. Z.\}",

note = "Funding Information: This work was supported by the National Fundamental and Applied Research Project; The Key Project of the National Science Foundation of China, No. 69896260; The Innovation Project Item, Chinese Academy of Sciences; The Program of CAS Hundred Talents and The National Natural Science Foundation of China.",

year = "2004",

month = feb,

day = "25",

doi = "10.1016/j.mseb.2003.10.015",

language = "English",

volume = "107",

pages = "84--88",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Growth of ZnSe films on ZnO-Si templates

AU - Wang, X. H.

AU - Fan, X. W.

AU - Shan, C. X.

AU - Zhang, Z. Z.

AU - Su, W.

AU - Zhang, J. Y.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lu, Y. M.

AU - Liu, Y. C.

AU - Shen, D. Z.

N1 - Funding Information: This work was supported by the National Fundamental and Applied Research Project; The Key Project of the National Science Foundation of China, No. 69896260; The Innovation Project Item, Chinese Academy of Sciences; The Program of CAS Hundred Talents and The National Natural Science Foundation of China.

PY - 2004/2/25

Y1 - 2004/2/25

N2 - We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).

AB - We report the growth and characterization of ZnSe films prepared on ZnO-Si(1 1 1) templates. It was found that the as-deposited ZnSe films were highly oriented with zinc blende structure and a preferred (1 1 1) crystal orientation. It was also found that quality of ZnSe epitaxial layers depends on the ZnO annealing conditions. With a 1h 1000 °C ZnO annealing, we could achieve a ZnSe/ZnO-Si(1 1 1) sample with a 53meV room temperature (room temperature) photoluminescence (PL) full-width-half-maximum (FWHM).

UR - https://www.scopus.com/pages/publications/10744230001

UR - https://www.scopus.com/pages/publications/10744230001#tab=citedBy

U2 - 10.1016/j.mseb.2003.10.015

DO - 10.1016/j.mseb.2003.10.015

M3 - Article

AN - SCOPUS:10744230001

SN - 0921-5107

VL - 107

SP - 84

EP - 88

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

Growth of ZnSe films on ZnO-Si templates

Abstract

All Science Journal Classification (ASJC) codes

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