Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

S. J. Chang; C. H. Hsiao; S. C. Hung; S. H. Chih; B. W. Lan; S. B. Wang; S. P. Chang; Y. C. Cheng; T. C. Li; B. R. Huang

doi:10.1149/1.3246004

Growth of ZnSe_1-xTe_x nanotips and the fabrication of ZnSe_1-xTe_x nanotip-based photodetector

S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, B. R. Huang

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

Original language	English
Pages (from-to)	K1-K4
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	1
DOIs	https://doi.org/10.1149/1.3246004
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3246004

Cite this

@article{a35e774a46bc456faf9bab0b9c73aea3,

title = "Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector",

abstract = "We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.",

author = "Chang, {S. J.} and Hsiao, {C. H.} and Hung, {S. C.} and Chih, {S. H.} and Lan, {B. W.} and Wang, {S. B.} and Chang, {S. P.} and Cheng, {Y. C.} and Li, {T. C.} and Huang, {B. R.}",

year = "2010",

doi = "10.1149/1.3246004",

language = "English",

volume = "157",

pages = "K1--K4",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Growth of ZnSe1-xTex nanotips and the fabrication of ZnSe1-xTex nanotip-based photodetector

AU - Chang, S. J.

AU - Hsiao, C. H.

AU - Hung, S. C.

AU - Chih, S. H.

AU - Lan, B. W.

AU - Wang, S. B.

AU - Chang, S. P.

AU - Cheng, Y. C.

AU - Li, T. C.

AU - Huang, B. R.

PY - 2010

Y1 - 2010

N2 - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

AB - We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

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