Abstract
The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.
Original language | English |
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Pages (from-to) | 7-8 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 23 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1987 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering