Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

Y. C. Chou, C. T. Lee, C. D. Chen, K. C. Chu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.

Original languageEnglish
Pages (from-to)7-8
Number of pages2
JournalElectronics Letters
Volume23
Issue number1
DOIs
Publication statusPublished - 1987

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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