Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

Y. C. Chou; C. T. Lee; C. D. Chen; K. C. Chu

doi:10.1049/el:19870005

Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

Y. C. Chou, C. T. Lee, C. D. Chen, K. C. Chu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.

Original language	English
Pages (from-to)	7-8
Number of pages	2
Journal	Electronics Letters
Volume	23
Issue number	1
DOIs	https://doi.org/10.1049/el:19870005
Publication status	Published - 1987

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19870005

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title = "Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy",

abstract = "The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.",

author = "Chou, {Y. C.} and Lee, {C. T.} and Chen, {C. D.} and Chu, {K. C.}",

year = "1987",

doi = "10.1049/el:19870005",

language = "English",

volume = "23",

pages = "7--8",

journal = "Electronics Letters",

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T1 - Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

AU - Chou, Y. C.

AU - Lee, C. T.

AU - Chen, C. D.

AU - Chu, K. C.

PY - 1987

Y1 - 1987

N2 - The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.

AB - The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650ΰC between temperatures of 550ΰC and 700ΰC.

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U2 - 10.1049/el:19870005

DO - 10.1049/el:19870005

M3 - Article

AN - SCOPUS:0023641791

VL - 23

SP - 7

EP - 8

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

Growth Temperature Dependence of low-Noise Mesfet in Molecular-Beam Epitaxy

Abstract

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