Guest editorial special issue on nanowire transistors: Modeling, device design, and technology

M. Jagadesh Kumar; Mark A. Reed; Gehan A.J. Amaratunga; Guy M. Cohen; David B. Janes; Charles M. Lieber; M. Meyyappan; Lars Erik Wernersson; Kang L. Wang; Robert S. Chau; Theodore I. Kamins; Mark Lundstrom; Bin Yu; Chongwu Zhou

doi:10.1109/TNANO.2008.2010023

Guest editorial special issue on nanowire transistors: Modeling, device design, and technology

M. Jagadesh Kumar, Mark A. Reed, Gehan A.J. Amaratunga, Guy M. Cohen, David B. Janes, Charles M. Lieber, M. Meyyappan, Lars Erik Wernersson, Kang L. Wang, Robert S. Chau, Theodore I. Kamins, Mark Lundstrom, Bin Yu, Chongwu Zhou

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Editorial › peer-review

2 Citations (Scopus)

Original language	English
Article number	4717305
Pages (from-to)	643-650
Number of pages	8
Journal	IEEE Transactions on Nanotechnology
Volume	7
Issue number	6
DOIs	https://doi.org/10.1109/TNANO.2008.2010023
Publication status	Published - 2008 Nov

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2008.2010023

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Kumar, M. J., Reed, M. A., Amaratunga, G. A. J., Cohen, G. M., Janes, D. B., Lieber, C. M., Meyyappan, M., Wernersson, L. E., Wang, K. L., Chau, R. S., Kamins, T. I., Lundstrom, M., Yu, B., & Zhou, C. (2008). Guest editorial special issue on nanowire transistors: Modeling, device design, and technology. IEEE Transactions on Nanotechnology, 7(6), 643-650. Article 4717305. https://doi.org/10.1109/TNANO.2008.2010023

@article{665f8dfced1342baa3b32f17140e8234,

title = "Guest editorial special issue on nanowire transistors: Modeling, device design, and technology",

author = "Kumar, {M. Jagadesh} and Reed, {Mark A.} and Amaratunga, {Gehan A.J.} and Cohen, {Guy M.} and Janes, {David B.} and Lieber, {Charles M.} and M. Meyyappan and Wernersson, {Lars Erik} and Wang, {Kang L.} and Chau, {Robert S.} and Kamins, {Theodore I.} and Mark Lundstrom and Bin Yu and Chongwu Zhou",

note = "Funding Information: Dr. Zhou is currently an Associate Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY. He was a recipient of a number of awards, including the National Science Foundation CAREER Award, the National Aeronautics and Space Administration TGiR Award, the University of Southern California Junior Faculty Research Award, and the IEEE Nanotechnology Early Career Award. Funding Information: Kang L.Wang (F{\textquoteright}92) received the Ph.D. degree from Massachusetts Institute of Technology, Cambridge, in 1970. From 1970 to 1972, he was an Assistant Professor with the Massachusetts Institute of Technol-ogy. From 1972 to 1979, he was with the Corporate Research and Development Center, General Electric. In 1979, he was with the Electrical Engineering Department, University of California, Los Angeles (UCLA), where he served as the Chair of this department from 1993 to 1996. He was the Dean of engineering from 2000 to 2002 with the Hong Kong University of Science and Technology, Kowloon, Hong Kong. He is the holder of the Raytheon Chair Professor of physical electronics with the Electrical Engineering Department, UCLA. He also currently serves as the Director of the Focus Center Research Program Center on Functional Engineered Nano Architec-tonics (FENA), which is an interdisciplinary research center that is funded by the Semiconductor Industry Association and the Department of Defense to address the need of information process-ing technology beyond scaled CMOS. FENA involves 15 universities across the nation. He was also named the Director of the Western Institute of Nanoelectronics, which is a coordinated multiproject research institute that is funded by the Nanoelectronics Research Initiative, Intel, and the State of California. The current ongoing projects with the University of California, Berkeley, Stanford University, University of California, Santa Barbara, and UCLA are aimed at spintronics for low-power applications. He was also the Founding Director of the Nanoelectronics Research Facility, UCLA (established in 1989), with the infrastructure to further research in nanotechnology. He was the inventor of the strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He is the author or coauthor of more than 300 papers published in international journals and conference proceedings. He is the holder of 17 patents. His current research interests include semiconductor nanodevices and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum-dot arrays Si-based molecular beam epitaxy (MBE), quantum structures and devices; nanoepitaxy of heterostructures; spintronic materials and devices; and SiGe MBE and quantum structures. Prof. Wang serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers, 2004), as a Senior Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY, and as a Series Editor of Nanoscience and Nanotechnology (Artech House, 2002). He was a recipient of the following awards: the Intenational Business Machines (IBM) Faculty Award; the Guggenheim Fellow Award; the TSMC Honor Lectureship Award; the Honoris Causa Award from the Politechnic University, Torino, Italy; the Semiconductor Research Corporation Inventor Awards; and the Technical Excellence Achievement Award from Semiconductor Research Corporation.",

year = "2008",

month = nov,

doi = "10.1109/TNANO.2008.2010023",

language = "English",

volume = "7",

pages = "643--650",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

Kumar, MJ, Reed, MA, Amaratunga, GAJ, Cohen, GM, Janes, DB, Lieber, CM, Meyyappan, M, Wernersson, LE, Wang, KL, Chau, RS, Kamins, TI, Lundstrom, M, Yu, B & Zhou, C 2008, 'Guest editorial special issue on nanowire transistors: Modeling, device design, and technology', IEEE Transactions on Nanotechnology, vol. 7, no. 6, 4717305, pp. 643-650. https://doi.org/10.1109/TNANO.2008.2010023

TY - JOUR

T1 - Guest editorial special issue on nanowire transistors

T2 - Modeling, device design, and technology

AU - Kumar, M. Jagadesh

AU - Reed, Mark A.

AU - Amaratunga, Gehan A.J.

AU - Cohen, Guy M.

AU - Janes, David B.

AU - Lieber, Charles M.

AU - Meyyappan, M.

AU - Wernersson, Lars Erik

AU - Wang, Kang L.

AU - Chau, Robert S.

AU - Kamins, Theodore I.

AU - Lundstrom, Mark

AU - Yu, Bin

AU - Zhou, Chongwu

N1 - Funding Information: Dr. Zhou is currently an Associate Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY. He was a recipient of a number of awards, including the National Science Foundation CAREER Award, the National Aeronautics and Space Administration TGiR Award, the University of Southern California Junior Faculty Research Award, and the IEEE Nanotechnology Early Career Award. Funding Information: Kang L.Wang (F’92) received the Ph.D. degree from Massachusetts Institute of Technology, Cambridge, in 1970. From 1970 to 1972, he was an Assistant Professor with the Massachusetts Institute of Technol-ogy. From 1972 to 1979, he was with the Corporate Research and Development Center, General Electric. In 1979, he was with the Electrical Engineering Department, University of California, Los Angeles (UCLA), where he served as the Chair of this department from 1993 to 1996. He was the Dean of engineering from 2000 to 2002 with the Hong Kong University of Science and Technology, Kowloon, Hong Kong. He is the holder of the Raytheon Chair Professor of physical electronics with the Electrical Engineering Department, UCLA. He also currently serves as the Director of the Focus Center Research Program Center on Functional Engineered Nano Architec-tonics (FENA), which is an interdisciplinary research center that is funded by the Semiconductor Industry Association and the Department of Defense to address the need of information process-ing technology beyond scaled CMOS. FENA involves 15 universities across the nation. He was also named the Director of the Western Institute of Nanoelectronics, which is a coordinated multiproject research institute that is funded by the Nanoelectronics Research Initiative, Intel, and the State of California. The current ongoing projects with the University of California, Berkeley, Stanford University, University of California, Santa Barbara, and UCLA are aimed at spintronics for low-power applications. He was also the Founding Director of the Nanoelectronics Research Facility, UCLA (established in 1989), with the infrastructure to further research in nanotechnology. He was the inventor of the strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He is the author or coauthor of more than 300 papers published in international journals and conference proceedings. He is the holder of 17 patents. His current research interests include semiconductor nanodevices and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum-dot arrays Si-based molecular beam epitaxy (MBE), quantum structures and devices; nanoepitaxy of heterostructures; spintronic materials and devices; and SiGe MBE and quantum structures. Prof. Wang serves on the editorial board of the Encyclopedia of Nanoscience and Nanotechnology (American Scientific Publishers, 2004), as a Senior Editor of the IEEE TRANSACTIONS ON NANOTECHNOLOGY, and as a Series Editor of Nanoscience and Nanotechnology (Artech House, 2002). He was a recipient of the following awards: the Intenational Business Machines (IBM) Faculty Award; the Guggenheim Fellow Award; the TSMC Honor Lectureship Award; the Honoris Causa Award from the Politechnic University, Torino, Italy; the Semiconductor Research Corporation Inventor Awards; and the Technical Excellence Achievement Award from Semiconductor Research Corporation.

PY - 2008/11

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U2 - 10.1109/TNANO.2008.2010023

DO - 10.1109/TNANO.2008.2010023

M3 - Editorial

AN - SCOPUS:58149248073

SN - 1536-125X

VL - 7

SP - 643

EP - 650

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 6

M1 - 4717305

ER -

Guest editorial special issue on nanowire transistors: Modeling, device design, and technology

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