Hall effect measurements on new thermoelectric materials

Jarrod Short; Sim Loo; Sangeeta Lal; Kuei Fang Hsu; Eric Quarez; Mercouri G. Kanatzidis; Timothy P. Hogan

doi:10.1557/proc-793-s8.35

Hall effect measurements on new thermoelectric materials

Jarrod Short, Sim Loo, Sangeeta Lal, Kuei Fang Hsu, Eric Quarez, Mercouri G. Kanatzidis, Timothy P. Hogan

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

Original language	English
Pages (from-to)	323-332
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	793
DOIs	https://doi.org/10.1557/proc-793-s8.35
Publication status	Published - 2003
Event	Thermoelectric Materials 2003 - Research and Applications - Boston, MA., United States Duration: 2003 Dec 1 → 2003 Dec 3

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Hall effect measurements on new thermoelectric materials",

abstract = "In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.",

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T1 - Hall effect measurements on new thermoelectric materials

AU - Short, Jarrod

AU - Loo, Sim

AU - Lal, Sangeeta

AU - Hsu, Kuei Fang

AU - Quarez, Eric

AU - Kanatzidis, Mercouri G.

AU - Hogan, Timothy P.

PY - 2003

Y1 - 2003

N2 - In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

AB - In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

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M3 - Conference article

AN - SCOPUS:2442445155

SN - 0272-9172

VL - 793

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EP - 332

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Thermoelectric Materials 2003 - Research and Applications

Y2 - 1 December 2003 through 3 December 2003

ER -

Hall effect measurements on new thermoelectric materials

Abstract

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