We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n+-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)