Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo; C. L. Wu; C. H. Shen; W. H. Chang; T. M. Hsu; J. S. Wang; J. T. Hsu

doi:10.1063/1.1738183

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo, C. L. Wu, C. H. Shen, W. H. Chang, T. M. Hsu, J. S. Wang, J. T. Hsu

Department of Physics

Research output: Contribution to journal › Article › peer-review

131 Citations (Scopus)

Abstract

The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

Original language	English
Pages (from-to)	3765-3767
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1738183
Publication status	Published - 2004 May 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1738183

Cite this

@article{7b444969d1e441e78831cf289cc45f2b,

title = "Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature",

abstract = "The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.",

author = "S. Gwo and Wu, {C. L.} and Shen, {C. H.} and Chang, {W. H.} and Hsu, {T. M.} and Wang, {J. S.} and Hsu, {J. T.}",

year = "2004",

month = may,

day = "10",

doi = "10.1063/1.1738183",

language = "English",

volume = "84",

pages = "3765--3767",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, W. H.

AU - Hsu, T. M.

AU - Wang, J. S.

AU - Hsu, J. T.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

AB - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=2942601794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942601794&partnerID=8YFLogxK

U2 - 10.1063/1.1738183

DO - 10.1063/1.1738183

M3 - Article

AN - SCOPUS:2942601794

SN - 0003-6951

VL - 84

SP - 3765

EP - 3767

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this