Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo; C. L. Wu; C. H. Shen; W. H. Chang; T. M. Hsu; J. S. Wang; J. T. Hsu

doi:10.1063/1.1738183

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

S. Gwo
, C. L. Wu
, C. H. Shen
, W. H. Chang
, T. M. Hsu
, J. S. Wang
, J. T. Hsu

Department of Physics

Research output: Contribution to journal › Article › peer-review

131 Citations (Scopus)

Abstract

The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

Original language	English
Pages (from-to)	3765-3767
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1738183
Publication status	Published - 2004 May 10

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SDG 7 Affordable and Clean Energy

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Physics and Astronomy (miscellaneous)

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10.1063/1.1738183

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title = "Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature",

abstract = "The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.",

author = "S. Gwo and Wu, \{C. L.\} and Shen, \{C. H.\} and Chang, \{W. H.\} and Hsu, \{T. M.\} and Wang, \{J. S.\} and Hsu, \{J. T.\}",

year = "2004",

month = may,

day = "10",

doi = "10.1063/1.1738183",

language = "English",

volume = "84",

pages = "3765--3767",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, W. H.

AU - Hsu, T. M.

AU - Wang, J. S.

AU - Hsu, J. T.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

AB - The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.

UR - https://www.scopus.com/pages/publications/2942601794

UR - https://www.scopus.com/pages/publications/2942601794#tab=citedBy

U2 - 10.1063/1.1738183

DO - 10.1063/1.1738183

M3 - Article

AN - SCOPUS:2942601794

SN - 0003-6951

VL - 84

SP - 3765

EP - 3767

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Abstract

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