AlN(0001), β-Si3N4(0001) and Si(111) were studied and found to form coincident lattices at the interfaces. In addition, an ultrathin (∼1.5 nm) β-Si3N4 interlayer was demonstrated to be very effective in blocking Si/Al interdiffusion during the growth of III-nitrides on Si(111). Both factors contribute to the high epitaxial quality of GaN films grown on Si(111) using AlN/β-Si3N4 bilayer buffer.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)