Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/ β-Si3N4(0001) double-buffer structure

Chung Lin Wu, Jhih Chun Wang, Meng Hsuan Chan, Tom T. Chen, Shangjr Gwo

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

AlN(0001), β-Si3N4(0001) and Si(111) were studied and found to form coincident lattices at the interfaces. In addition, an ultrathin (∼1.5 nm) β-Si3N4 interlayer was demonstrated to be very effective in blocking Si/Al interdiffusion during the growth of III-nitrides on Si(111). Both factors contribute to the high epitaxial quality of GaN films grown on Si(111) using AlN/β-Si3N4 bilayer buffer.

Original languageEnglish
Pages (from-to)4530-4532
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 2003 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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