Heteroepitaxy of PtSi/SiGe on Si(100) by dual electron gun co-deposition at high temperatures

J. R. Yang, C. K. Chung, W. J. Chen, Y. H. Chang, J. Hwang

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Abstract

Co-deposition of both PtSi and SiGe layers on a p-Si(100) substrate has been performed at high temperatures in a dual electron gun deposition chamber at a base pressure of 10-10 Torr. Reflection high energy electron diffraction, transmission electron microscope, and X-ray diffraction have been used in characterizing the epitaxial film. The PtSi/SiGe film co-deposited at a substrate temperature of 450°C had four types of epitaxial modes. Two of them were the same as the epitaxial modes for the PtSi film formed by depositing Pt on Si with sequential annealing. The other two epitaxial modes were observed in the PtSi/SiGe/p- Si(100) for the first time. The PtSi film co-deposited at 550°C showed polycrystalline structures, corresponding to three-dimensional island growth.

Original languageEnglish
Pages (from-to)717-722
Number of pages6
JournalJournal of Crystal Growth
Volume121
Issue number4
DOIs
Publication statusPublished - 1992 Aug 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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