Heterojunction bipolar transistor with zero conduction band discontinuity cross-reference to related application

Wen-Chau Liu (Inventor)

Research output: Patent


A bipolar heterojunction transistor (HBT) includes a collector layer, a base layer formed on the collector layer, a first transition layer formed on the base layer, an emitter layer formed on the first transition layer, a second transition layer formed on the emitter layer, and an emitter cap layer formed on the second transition layer. Each of the first and second transition layers is formed of a composition that contains an element, the mole fraction of which is graded in such a manner that the conduction band of the HBT is continuous through the base layer, the first and second transition layers, the emitter layer and the emitter cap layer.
Original languageEnglish
Patent number6791126
Publication statusPublished - 2003 Dec 4


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