Heterojunction photodiodes based on honeycomb structures for ultraviolet detection

Shu Yi Tsai, Jian Hong Lee, Min Hsiung Hon

Research output: Contribution to journalArticlepeer-review


The p-NiO/n-ZnO heterojunction device based on honeycomb structures was fabricated by RF sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, field-emission scanning electron microscope (FE-SEM), and current-voltage (I-V) photocurrent measurements. The XRD spectra indicate that ZnO films were of hexagonal wurtzite structures, preferentially (002) oriented. SEM show that the spherical polystyrene stacking on hexagonal close-packing lattice structure. Optical measurements showed that the honeycomb structures exhibited the maximum haze values up to 50% at wavelength range 380-800 nm. The I-V curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest of leakage current is 8:23 × 10 -9 A/cm 2 for p-NiO/n-ZnO heterojunction device.

Original languageEnglish
Article number06FE12
JournalJapanese journal of applied physics
Issue number6 PART 2
Publication statusPublished - 2012 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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