Heterojunction photodiodes based on p-NiO/ n-ZnO for ultraviolet detection

Shu Yi Tsai, Min Hsiung Hon, Yang Ming Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

All oxide-based, nano-transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and electric properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall measurement, and photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with a preferred orientation along the (0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 4.35×10-8 A/cm2 for p-NiO/n-ZnO heterojunction device. The realization of all-wide-band-gap p-NiO/n-ZnO heterojunction will provide a promising application of UV light emitting diodes.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages1184-1187
Number of pages4
DOIs
Publication statusPublished - 2011
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
Duration: 2011 Feb 202011 Feb 23

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
CountryTaiwan
CityKaohsiung
Period11-02-2011-02-23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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