TY - GEN
T1 - Heterojunction photodiodes based on p-NiO/ n-ZnO for ultraviolet detection
AU - Tsai, Shu Yi
AU - Hon, Min Hsiung
AU - Lu, Yang Ming
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - All oxide-based, nano-transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and electric properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall measurement, and photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with a preferred orientation along the (0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 4.35×10-8 A/cm2 for p-NiO/n-ZnO heterojunction device. The realization of all-wide-band-gap p-NiO/n-ZnO heterojunction will provide a promising application of UV light emitting diodes.
AB - All oxide-based, nano-transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and electric properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall measurement, and photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with a preferred orientation along the (0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 4.35×10-8 A/cm2 for p-NiO/n-ZnO heterojunction device. The realization of all-wide-band-gap p-NiO/n-ZnO heterojunction will provide a promising application of UV light emitting diodes.
UR - http://www.scopus.com/inward/record.url?scp=80053317138&partnerID=8YFLogxK
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U2 - 10.1109/NEMS.2011.6017568
DO - 10.1109/NEMS.2011.6017568
M3 - Conference contribution
AN - SCOPUS:80053317138
SN - 9781612847757
T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
SP - 1184
EP - 1187
BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
T2 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Y2 - 20 February 2011 through 23 February 2011
ER -