Heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer

Jung Hui Tsai, Huey Ing Chen, Wen Chau Liu

Research output: Contribution to journalArticle

Abstract

In this paper, we will demonstrate a new heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer. The device studied takes the advantages of the heterostructure-emitter bipolar transistor, the graded heterojunction bipolar transistor (HBT), and an AlGaAs/GaAs HBT with an InGaAs base layer simultaneously. Owing to the presence of the GaAs emitter and graded AlxGa1-xAs confinement layer, a low offset voltage of 100 mV is obtained. Also, attributed to the insertion of a InGaAs quantum well, a high emitter efficiency yielding the high common-emitter current gain of 120 is achieved. Consequently, the HEPBT studied shows a promise for circuit applications.

Original languageEnglish
Pages (from-to)114-116
Number of pages3
JournalMaterials Chemistry and Physics
Volume51
Issue number2
DOIs
Publication statusPublished - 1997 Nov

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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