Heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer

Jung Hui Tsai, Huey-Ing Chen, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

In this paper, we will demonstrate a new heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer. The device studied takes the advantages of the heterostructure-emitter bipolar transistor, the graded heterojunction bipolar transistor (HBT), and an AlGaAs/GaAs HBT with an InGaAs base layer simultaneously. Owing to the presence of the GaAs emitter and graded AlxGa1-xAs confinement layer, a low offset voltage of 100 mV is obtained. Also, attributed to the insertion of a InGaAs quantum well, a high emitter efficiency yielding the high common-emitter current gain of 120 is achieved. Consequently, the HEPBT studied shows a promise for circuit applications.

Original languageEnglish
Pages (from-to)114-116
Number of pages3
JournalMaterials Chemistry and Physics
Volume51
Issue number2
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Heterojunctions
Transistors
emitters
transistors
Heterojunction bipolar transistors
bipolar transistors
Bipolar transistors
Semiconductor quantum wells
heterojunctions
Networks (circuits)
Electric potential
low voltage
aluminum gallium arsenides
insertion
quantum wells
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "In this paper, we will demonstrate a new heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer. The device studied takes the advantages of the heterostructure-emitter bipolar transistor, the graded heterojunction bipolar transistor (HBT), and an AlGaAs/GaAs HBT with an InGaAs base layer simultaneously. Owing to the presence of the GaAs emitter and graded AlxGa1-xAs confinement layer, a low offset voltage of 100 mV is obtained. Also, attributed to the insertion of a InGaAs quantum well, a high emitter efficiency yielding the high common-emitter current gain of 120 is achieved. Consequently, the HEPBT studied shows a promise for circuit applications.",
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Heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer. / Tsai, Jung Hui; Chen, Huey-Ing; Liu, Wen-Chau.

In: Materials Chemistry and Physics, Vol. 51, No. 2, 01.01.1997, p. 114-116.

Research output: Contribution to journalArticle

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