In this paper, we will demonstrate a new heterostructure-emitter and pseudomorphic base transistor (HEPBT) with a graded AlxGa1-xAs confinement layer. The device studied takes the advantages of the heterostructure-emitter bipolar transistor, the graded heterojunction bipolar transistor (HBT), and an AlGaAs/GaAs HBT with an InGaAs base layer simultaneously. Owing to the presence of the GaAs emitter and graded AlxGa1-xAs confinement layer, a low offset voltage of 100 mV is obtained. Also, attributed to the insertion of a InGaAs quantum well, a high emitter efficiency yielding the high common-emitter current gain of 120 is achieved. Consequently, the HEPBT studied shows a promise for circuit applications.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics