HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)454-456
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2006 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide'. Together they form a unique fingerprint.

Cite this