HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

C. H. Wu; B. F. Hung; Albert Chin; S. J. Wang; F. Y. Yen; Y. T. Hou; Y. Jin; H. J. Tao; S. C. Chen; M. S. Liang

doi:10.1109/LED.2006.874778

HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The authors have fabricated low-temperature fully silicided YbSi_2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm²/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

Original language	English
Pages (from-to)	454-456
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/LED.2006.874778
Publication status	Published - 2006 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.874778

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title = "HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide",

abstract = "The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.",

author = "Wu, {C. H.} and Hung, {B. F.} and Albert Chin and Wang, {S. J.} and Yen, {F. Y.} and Hou, {Y. T.} and Y. Jin and Tao, {H. J.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2006",

month = jun,

doi = "10.1109/LED.2006.874778",

language = "English",

volume = "27",

pages = "454--456",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

AU - Wu, C. H.

AU - Hung, B. F.

AU - Chin, Albert

AU - Wang, S. J.

AU - Yen, F. Y.

AU - Hou, Y. T.

AU - Jin, Y.

AU - Tao, H. J.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2006/6

Y1 - 2006/6

N2 - The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

AB - The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 °C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm2/V·;s. They have additional merit of a process compatible with current very large scale integration fabrication lines.

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UR - http://www.scopus.com/inward/citedby.url?scp=33744764923&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.874778

DO - 10.1109/LED.2006.874778

M3 - Article

AN - SCOPUS:33744764923

SN - 0741-3106

VL - 27

SP - 454

EP - 456

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

HfAlON n-MOSFETs Incorporating low-work function gate using ytterbium silicide

Abstract

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