HfLaON n-MOSFETs using a low work function HfSix gate

C. F. Cheng, C. H. Wu, N. C. Su, S. J. Wang, S. P. McAlister, Albert Chin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7 La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm2/(V · s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-°C rapid thermal annealing,making them fully compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)1092-1094
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
Publication statusPublished - 2007 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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