The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering