HfSiON n-MOSFETs using low-work function HfSiχ gate

C. H. Wu, B. F. Hung, A. Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The authors have developed a novel high-temperature stable HfSiχgate for high-κ HfSiON gate dielectric. After a 1000 °C RTA, the HfSiχ/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm2/V · s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)762-764
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number9
DOIs
Publication statusPublished - 2006 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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