High-barrier gate and tri-step doped channel transistor

W. C. Liu; H. J. Pan; W. L. Chang; K. H. Yu; S. C. Feng; J. H. Yan

High-barrier gate and tri-step doped channel transistor

W. C. Liu, H. J. Pan, W. L. Chang, K. H. Yu, S. C. Feng, J. H. Yan

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p⁺)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f_T) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

Original language	English
Pages	454-456
Number of pages	3
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 1998 Dec 14 → 1998 Dec 16

Other

Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	98-12-14 → 98-12-16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

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title = "High-barrier gate and tri-step doped channel transistor",

abstract = "A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.",

author = "Liu, {W. C.} and Pan, {H. J.} and Chang, {W. L.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

year = "1999",

language = "English",

pages = "454--456",

}

TY - CONF

T1 - High-barrier gate and tri-step doped channel transistor

AU - Liu, W. C.

AU - Pan, H. J.

AU - Chang, W. L.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999

Y1 - 1999

N2 - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

AB - A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0032646906&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032646906&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032646906

SP - 454

EP - 456

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

High-barrier gate and tri-step doped channel transistor

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