High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai, M. Yokoyama, C. Y. Chang, J. D. Guo, J. S. Tsang, S. H. Chan, S. M. Sze

Research output: Contribution to journalConference articlepeer-review

Abstract

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Original languageEnglish
Pages (from-to)523-528
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume572
DOIs
Publication statusPublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 8

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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