High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai; M. Yokoyama; C. Y. Chang; J. D. Guo; J. S. Tsang; S. H. Chan; S. M. Sze

doi:10.1557/proc-572-523

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai, M. Yokoyama, C. Y. Chang, J. D. Guo, J. S. Tsang, S. H. Chan, S. M. Sze

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as Φ_B = 1.13eV by current-voltage (I-V) method and corrected to be Φ_B = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be Φ_B = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Original language	English
Pages (from-to)	523-528
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-523
Publication status	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2508332f3e95457685a5b73da27bd1b2,

title = "High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal",

abstract = "Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.",

author = "Lai, {W. C.} and M. Yokoyama and Chang, {C. Y.} and Guo, {J. D.} and Tsang, {J. S.} and Chan, {S. H.} and Sze, {S. M.}",

year = "1999",

doi = "10.1557/proc-572-523",

language = "English",

volume = "572",

pages = "523--528",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

AU - Lai, W. C.

AU - Yokoyama, M.

AU - Chang, C. Y.

AU - Guo, J. D.

AU - Tsang, J. S.

AU - Chan, S. H.

AU - Sze, S. M.

PY - 1999

Y1 - 1999

N2 - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

AB - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

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DO - 10.1557/proc-572-523

M3 - Conference article

AN - SCOPUS:0033337825

SN - 0272-9172

VL - 572

SP - 523

EP - 528

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

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