High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai; M. Yokoyama; C. Y. Chang; J. D. Guo; J. S. Tsang; S. H. Chan; S. M. Sze

doi:10.1557/proc-572-523

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

W. C. Lai
, M. Yokoyama
, C. Y. Chang
, J. D. Guo
, J. S. Tsang
, S. H. Chan
, S. M. Sze

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as Φ_B = 1.13eV by current-voltage (I-V) method and corrected to be Φ_B = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be Φ_B = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Original language	English
Pages (from-to)	523-528
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-523
Publication status	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-572-523

Cite this

@article{2508332f3e95457685a5b73da27bd1b2,

title = "High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal",

abstract = "Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.",

author = "Lai, \{W. C.\} and M. Yokoyama and Chang, \{C. Y.\} and Guo, \{J. D.\} and Tsang, \{J. S.\} and Chan, \{S. H.\} and Sze, \{S. M.\}",

year = "1999",

doi = "10.1557/proc-572-523",

language = "English",

volume = "572",

pages = "523--528",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

AU - Lai, W. C.

AU - Yokoyama, M.

AU - Chang, C. Y.

AU - Guo, J. D.

AU - Tsang, J. S.

AU - Chan, S. H.

AU - Sze, S. M.

PY - 1999

Y1 - 1999

N2 - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

AB - Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as ΦB = 1.13eV by current-voltage (I-V) method and corrected to be ΦB = 1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB = 1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

UR - https://www.scopus.com/pages/publications/0033337825

UR - https://www.scopus.com/pages/publications/0033337825#tab=citedBy

U2 - 10.1557/proc-572-523

DO - 10.1557/proc-572-523

M3 - Conference article

AN - SCOPUS:0033337825

SN - 0272-9172

VL - 572

SP - 523

EP - 528

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

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All Science Journal Classification (ASJC) codes

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