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Dive into the research topics of 'High barrier height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal'. Together they form a unique fingerprint.- Sort by
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W. C. Lai, M. Yokoyama, C. Y. Chang, J. D. Guo, J. S. Tsang, S. H. Chan, S. M. Sze
Research output: Contribution to journal › Conference article › peer-review