High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Wen-Chau Liu, W. L. Chang, J. Y. Chen, K. H. Yu, S. C. Feng, J. H. Yan

Research output: Contribution to conferencePaperpeer-review

Abstract

High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

Original languageEnglish
Pages457-459
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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