High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT

Wen-Chau Liu, W. L. Chang, J. Y. Chen, K. H. Yu, S. C. Feng, J. H. Yan

Research output: Contribution to conferencePaper

Abstract

High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga 0.51 In 0.49 P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f T and f max are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

Original languageEnglish
Pages457-459
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

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Transconductance
High electron mobility transistors
Electric breakdown
Current density
Microwaves
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, W-C., Chang, W. L., Chen, J. Y., Yu, K. H., Feng, S. C., & Yan, J. H. (1999). High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT . 457-459. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Chang, W. L. ; Chen, J. Y. ; Yu, K. H. ; Feng, S. C. ; Yan, J. H. / High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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title = "High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT",
abstract = "High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga 0.51 In 0.49 P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f T and f max are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.",
author = "Wen-Chau Liu and Chang, {W. L.} and Chen, {J. Y.} and Yu, {K. H.} and Feng, {S. C.} and Yan, {J. H.}",
year = "1999",
month = "1",
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language = "English",
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note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

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Liu, W-C, Chang, WL, Chen, JY, Yu, KH, Feng, SC & Yan, JH 1999, ' High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT ' Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16, pp. 457-459.

High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT . / Liu, Wen-Chau; Chang, W. L.; Chen, J. Y.; Yu, K. H.; Feng, S. C.; Yan, J. H.

1999. 457-459 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Chen, J. Y.

AU - Yu, K. H.

AU - Feng, S. C.

AU - Yan, J. H.

PY - 1999/1/1

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N2 - High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga 0.51 In 0.49 P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f T and f max are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

AB - High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga 0.51 In 0.49 P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f T and f max are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

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Liu W-C, Chang WL, Chen JY, Yu KH, Feng SC, Yan JH. High-breakdown and high-linearity Ga 0.51 In 0.49 P/In 0.15 Ga 0.85 As pseudomorphic HEMT . 1999. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .