@inproceedings{3ed1a69408a8422388c1cf1ef103a562,
title = "High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls",
abstract = "High-breakdown and high-linearity Ga0.5lIn0.49P Ilno. 15Ga0.8sAs pseudomorphic high electron mobility transistors (PHEMT's) have been successfully fabricated and demonstrated in both dc and ac performance. Together with a wide-gap Ga0.51In0.49P gate-insulator, a gate-to-drain breakdown voltage of 33 V is. further improved to over 40 V by selectively removing mesa sidewalls. The transconductance and output current density of a 1 ×100 μm2 device at room temperature (77 K) are 90 (J 20) mSlmm and 646 (780) mAlmm, respectively. In addition to the broad-plateau gm vs. IDS profile for the fabricated device, the associated fr and fmax vs. IDS profiles are also wide andflat. The measured frand fmax of 12 and 28.4 GHz are obtained, respectively.",
author = "Wen-Chau Liu and Chang, {W. L.} and Pan, {H. J.} and Wang, {W. C.} and Chen, {J. Y.} and Yu, {K. H.} and Feng, {S. C.}",
year = "1999",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "552--555",
editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",
booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",
address = "United States",
note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",
}