High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls

Wen-Chau Liu, W. L. Chang, H. J. Pan, W. C. Wang, J. Y. Chen, K. H. Yu, S. C. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-breakdown and high-linearity Ga0.5lIn0.49P Ilno. 15Ga0.8sAs pseudomorphic high electron mobility transistors (PHEMT's) have been successfully fabricated and demonstrated in both dc and ac performance. Together with a wide-gap Ga0.51In0.49P gate-insulator, a gate-to-drain breakdown voltage of 33 V is. further improved to over 40 V by selectively removing mesa sidewalls. The transconductance and output current density of a 1 ×100 μm2 device at room temperature (77 K) are 90 (J 20) mSlmm and 646 (780) mAlmm, respectively. In addition to the broad-plateau gm vs. IDS profile for the fabricated device, the associated fr and fmax vs. IDS profiles are also wide andflat. The measured frand fmax of 12 and 28.4 GHz are obtained, respectively.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
EditorsR.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
PublisherIEEE Computer Society
Pages552-555
Number of pages4
ISBN (Electronic)2863322451, 9782863322451
Publication statusPublished - 1999 Jan 1
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 1999 Sep 131999 Sep 15

Publication series

NameEuropean Solid-State Device Research Conference
Volume13-15 Sept. 1999
ISSN (Print)1930-8876

Other

Other29th European Solid-State Device Research Conference, ESSDERC 1999
CountryBelgium
CityLeuven
Period99-09-1399-09-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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