High-breakdown and high-linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls

Wen-Chau Liu, W. L. Chang, H. J. Pan, W. C. Wang, J. Y. Chen, K. H. Yu, S. C. Feng

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Engineering & Materials Science