High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Yen Wei Chen, Wei Chou Hsu, Her Ming Shieh, Yeong Jia Chen, Yu Shyan Lin, Yih Juan Li, Tzong Bin Wang

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.

Original languageEnglish
Pages (from-to)221-225
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number2
DOIs
Publication statusPublished - 2002 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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