High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Yen Wei Chen; Wei Chou Hsu; Her Ming Shieh; Yeong Jia Chen; Yu Shyan Lin; Yih Juan Li; Tzong Bin Wang

doi:10.1109/16.981210

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Yen Wei Chen, Wei Chou Hsu, Her Ming Shieh, Yeong Jia Chen, Yu Shyan Lin, Yih Juan Li, Tzong Bin Wang

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.

Original language	English
Pages (from-to)	221-225
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	2
DOIs	https://doi.org/10.1109/16.981210
Publication status	Published - 2002 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT",

abstract = "A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.",

author = "Chen, {Yen Wei} and Hsu, {Wei Chou} and Shieh, {Her Ming} and Chen, {Yeong Jia} and Lin, {Yu Shyan} and Li, {Yih Juan} and Wang, {Tzong Bin}",

year = "2002",

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doi = "10.1109/16.981210",

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T1 - High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

AU - Chen, Yen Wei

AU - Hsu, Wei Chou

AU - Shieh, Her Ming

AU - Chen, Yeong Jia

AU - Lin, Yu Shyan

AU - Li, Yih Juan

AU - Wang, Tzong Bin

PY - 2002/2/1

Y1 - 2002/2/1

N2 - A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.

AB - A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7.

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