High breakdown InGaP/InGaAs tunneling real space transfer HEMT

Yen Wei Chen, Wei-Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition. Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages401-404
Number of pages4
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - 2002 Jan 1
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 2002 Dec 112002 Dec 13

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period02-12-1102-12-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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