High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W. C. Liu; W. L. Chang; H. J. Pan; J. Y. Chen; W. C. Wang; K. H. Yu; S. C. Feng

High breakdown n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W. C. Liu, W. L. Chang, H. J. Pan, J. Y. Chen, W. C. Wang, K. H. Yu, S. C. Feng

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper reports on the characteristics of n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm² device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency f_τ of 17 GHz and the maximum oscillation frequency f_max of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

Original language	English
Pages (from-to)	Pr8-1171 - Pr8-1177
Journal	Journal De Physique. IV : JP
Volume	9 pt 2
Issue number	8
Publication status	Published - 1999 Sept
Event	Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain Duration: 1999 Sept 5 → 1999 Sept 10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{30aaa9fb3d5b4d958e03f3f8b993723f,

title = "High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD",

abstract = "This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.",

author = "Liu, {W. C.} and Chang, {W. L.} and Pan, {H. J.} and Chen, {J. Y.} and Wang, {W. C.} and Yu, {K. H.} and Feng, {S. C.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) ; Conference date: 05-09-1999 Through 10-09-1999",

year = "1999",

month = sep,

language = "English",

volume = "9 pt 2",

pages = "Pr8--1171 -- Pr8--1177",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "8",

}

TY - JOUR

T1 - High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

AU - Liu, W. C.

AU - Chang, W. L.

AU - Pan, H. J.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999/9

Y1 - 1999/9

N2 - This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

AB - This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0033187919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033187919&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033187919

SN - 1155-4339

VL - 9 pt 2

SP - Pr8-1171 - Pr8-1177

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 8

T2 - Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)

Y2 - 5 September 1999 through 10 September 1999

ER -

High breakdown n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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