High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W. C. Liu, W. L. Chang, H. J. Pan, J. Y. Chen, W. C. Wang, K. H. Yu, S. C. Feng

Research output: Contribution to journalConference article

Abstract

This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

Original languageEnglish
Pages (from-to)Pr8-1171 - Pr8-1177
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - 1999 Sep 1
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 1999 Sep 51999 Sep 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Liu, W. C., Chang, W. L., Pan, H. J., Chen, J. Y., Wang, W. C., Yu, K. H., & Feng, S. C. (1999). High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. Journal De Physique. IV : JP, 9 pt 2(8), Pr8-1171 - Pr8-1177.