High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

Wen-Chau Liu, W. L. Chang, H. J. Pan, J. Y. Chen, W. C. Wang, K. H. Yu, S. C. Feng

Research output: Contribution to journalConference article

Abstract

This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

Original languageEnglish
JournalJournal De Physique. IV : JP
Volume9 pt 2
Issue number8
Publication statusPublished - 1999 Sep 1
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 1999 Sep 51999 Sep 10

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Metallorganic chemical vapor deposition
Cutoff frequency
Transconductance
Field effect transistors
Electric breakdown
metalorganic chemical vapor deposition
Heterojunctions
heterojunctions
field effect transistors
breakdown
Networks (circuits)
transconductance
electrical faults
cut-off
oscillations
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Liu, W-C., Chang, W. L., Pan, H. J., Chen, J. Y., Wang, W. C., Yu, K. H., & Feng, S. C. (1999). High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. Journal De Physique. IV : JP, 9 pt 2(8).
Liu, Wen-Chau ; Chang, W. L. ; Pan, H. J. ; Chen, J. Y. ; Wang, W. C. ; Yu, K. H. ; Feng, S. C. / High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. In: Journal De Physique. IV : JP. 1999 ; Vol. 9 pt 2, No. 8.
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title = "High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD",
abstract = "This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.",
author = "Wen-Chau Liu and Chang, {W. L.} and Pan, {H. J.} and Chen, {J. Y.} and Wang, {W. C.} and Yu, {K. H.} and Feng, {S. C.}",
year = "1999",
month = "9",
day = "1",
language = "English",
volume = "9 pt 2",
journal = "European Physical Journal: Special Topics",
issn = "1951-6355",
publisher = "Springer Verlag",
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}

Liu, W-C, Chang, WL, Pan, HJ, Chen, JY, Wang, WC, Yu, KH & Feng, SC 1999, 'High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD', Journal De Physique. IV : JP, vol. 9 pt 2, no. 8.

High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. / Liu, Wen-Chau; Chang, W. L.; Pan, H. J.; Chen, J. Y.; Wang, W. C.; Yu, K. H.; Feng, S. C.

In: Journal De Physique. IV : JP, Vol. 9 pt 2, No. 8, 01.09.1999.

Research output: Contribution to journalConference article

TY - JOUR

T1 - High breakdown n+-GaAs/δ(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Pan, H. J.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999/9/1

Y1 - 1999/9/1

N2 - This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

AB - This paper reports on the characteristics of n+-GaAs/δ(p+)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1 × 100 μm2 device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency fτ of 17 GHz and the maximum oscillation frequency fmax of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.

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M3 - Conference article

VL - 9 pt 2

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

IS - 8

ER -