High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

Jan Shing Su, Wei Chou Hsu, Dong Tsuen Lin, Wei Lin, Hung Pin Shiao, Yu Shyan Lin, Jean Zen Huang, Piin Jye Chou

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Abstract

Al0.66In0.34As0.85Sb 0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.

Original languageEnglish
Pages (from-to)2095-2097
Number of pages3
JournalElectronics Letters
Volume32
Issue number22
DOIs
Publication statusPublished - 1996 Oct 24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Su, J. S., Hsu, W. C., Lin, D. T., Lin, W., Shiao, H. P., Lin, Y. S., Huang, J. Z., & Chou, P. J. (1996). High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors. Electronics Letters, 32(22), 2095-2097. https://doi.org/10.1049/el:19961372