Al0.66In0.34As0.85Sb 0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering