High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

Jan Shing Su; Wei Chou Hsu; Dong Tsuen Lin; Wei Lin; Hung Pin Shiao; Yu Shyan Lin; Jean Zen Huang; Piin Jye Chou

doi:10.1049/el:19961372

High-breakdown voltage Al_0.66In_0.34As_0.85Sb_0.15/In _0.75Ga_0.25As/InP heterostructure field-effect transistors

Jan Shing Su
, Wei Chou Hsu
, Dong Tsuen Lin
, Wei Lin
, Hung Pin Shiao
, Yu Shyan Lin
, Jean Zen Huang
, Piin Jye Chou

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Al_0.66In_0.34As_0.85Sb _0.15/In_0.75Ga_0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al_0.66In_0.34As_0.85Sb_0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.

Original language	English
Pages (from-to)	2095-2097
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	22
DOIs	https://doi.org/10.1049/el:19961372
Publication status	Published - 1996 Oct 24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19961372

Cite this

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title = "High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors",

abstract = "Al0.66In0.34As0.85Sb 0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.",

author = "Su, \{Jan Shing\} and Hsu, \{Wei Chou\} and Lin, \{Dong Tsuen\} and Wei Lin and Shiao, \{Hung Pin\} and Lin, \{Yu Shyan\} and Huang, \{Jean Zen\} and Chou, \{Piin Jye\}",

year = "1996",

month = oct,

day = "24",

doi = "10.1049/el:19961372",

language = "English",

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journal = "Electronics Letters",

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T1 - High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

AU - Su, Jan Shing

AU - Hsu, Wei Chou

AU - Lin, Dong Tsuen

AU - Lin, Wei

AU - Shiao, Hung Pin

AU - Lin, Yu Shyan

AU - Huang, Jean Zen

AU - Chou, Piin Jye

PY - 1996/10/24

Y1 - 1996/10/24

N2 - Al0.66In0.34As0.85Sb 0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.

AB - Al0.66In0.34As0.85Sb 0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.

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JF - Electronics Letters

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High-breakdown voltage Al_0.66In_0.34As_0.85Sb_0.15/In _0.75Ga_0.25As/InP heterostructure field-effect transistors

Abstract

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