High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

  • Jan Shing Su
  • , Wei Chou Hsu
  • , Dong Tsuen Lin
  • , Wei Lin
  • , Hung Pin Shiao
  • , Yu Shyan Lin
  • , Jean Zen Huang
  • , Piin Jye Chou

Research output: Contribution to journal › Article › peer-review

20   Link opens in a new tab Citations (Scopus)

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