High breakdown voltage GaN HFET with field plate

J. Li; S. J. Cai; G. Z. Pan; Y. L. Chen; C. P. Wen; K. L. Wang

doi:10.1049/el:20010091

High breakdown voltage GaN HFET with field plate

J. Li
, S. J. Cai
, G. Z. Pan
, Y. L. Chen
, C. P. Wen
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×10⁶ V/cm to 0.9×10⁶ V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BV_gd over BV_gs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.

Original language	English
Pages (from-to)	196-197
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	3
DOIs	https://doi.org/10.1049/el:20010091
Publication status	Published - 2001 Feb 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20010091

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title = "High breakdown voltage GaN HFET with field plate",

abstract = "A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×106 V/cm to 0.9×106 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.",

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doi = "10.1049/el:20010091",

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T1 - High breakdown voltage GaN HFET with field plate

AU - Li, J.

AU - Cai, S. J.

AU - Pan, G. Z.

AU - Chen, Y. L.

AU - Wen, C. P.

AU - Wang, K. L.

PY - 2001/2/1

Y1 - 2001/2/1

N2 - A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×106 V/cm to 0.9×106 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.

AB - A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×106 V/cm to 0.9×106 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.

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VL - 37

SP - 196

EP - 197

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

High breakdown voltage GaN HFET with field plate

Abstract

All Science Journal Classification (ASJC) codes

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